RSU002P03
Transistors
4V Drive Pch MOSFET
RSU002P03
Structure
Silicon P-channel MOSFET
Dimensions (Unit : mm)
UMT3
2.0
0.9
Features
1) Low On-resistance
(3)
0.3
0.2
0.7
2) 4V drive
(2)
0.65 0.65
1.3
(1)
0.15
Applications
Switching
Packaging specifications
Package
Taping
(1) Source
(2) Gate
(3) Drain
Inner circuit
Each lead has same dimensions
Abbreviated symbol : WP
(3)
Type
RSU002P03
Code
Basic ordering unit (pieces)
T106
3000
(2)
? 1
(1)
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
? 2
(1) Source
(2) Gate
(3) Drain
Absolute maximum ratings (Ta=25 ° C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
? 30
± 20
Unit
V
V
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Continuous
Pulsed
I D
I DP ? 1
P D ? 2
Tch
Tstg
± 0.25
± 0.5
0.2
150
? 55 to + 150
A
A
W
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Each terminal mounted on a recommended land
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a) ?
Limits
625
Unit
° C/W
? Each terminal mounted on a recommended land
Rev.A
1/4
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相关代理商/技术参数
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